参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage5 V
TechnologySi
Id - Continuous Drain Current50 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time45 ns
Rds On - Drain-Source Resistance83 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time120 ns
Qg - Gate Charge120 nC
Package / CaseTO-247G-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time50 ns
TARIC8541290000
PackagingTube
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor R6050JNZ4C13
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity30
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation615 W
USHTS8541290095
DescriptionMOSFET 600V N-CH 50A POWER MOSFET
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time35 ns