参数项参数值
参数项参数值
Forward Transconductance - Min1.5 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 2.5 V
TechnologySi
Id - Continuous Drain Current1.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance470 mOhms
Transistor Type1 P-Channel
CNHTS8541290000
Qg - Gate Charge17 nC
Package / CaseSC-95-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time10 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RSQ015P10HZGTR
Product CategoryMOSFET
Unit Weight0.001641 oz
Factory Pack Quantity3000
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1.25 W
USHTS8541290095
DescriptionMOSFET -100V P-CHANNEL -1.5A
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time15 ns