参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Id - Continuous Drain Current80 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time25.3 ns
Rds On - Drain-Source Resistance1.76 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time92.5 ns
Qg - Gate Charge68 nC
Package / CaseHSOP-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time55.1 ns
PackagingCut Tape
PackagingReel
TARIC8541290000
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RS1E350GNTB
Product CategoryMOSFET
Factory Pack Quantity2500
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation39 W
Part # AliasesRS1E350GN
USHTS8541290095
DescriptionMOSFET 30V N-CHANNEL 80A
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time21.3 ns