参数项参数值
参数项参数值
Forward Transconductance - Min1.4 S, 1.9 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityN-Channel, P-Channel
Id - Continuous Drain Current4.5 A, 3 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time7.2 ns, 7.9 ns
Rds On - Drain-Source Resistance25 mOhms, 55 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time12 ns, 27.6 ns
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge8.4 nC, 7.8 nC
Package / CaseTSMT-8
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
PackagingMouseReel
PackagingReel
PackagingCut Tape
ImageROHM Semiconductor QH8MA2TCR
SubcategoryMOSFETs
Channel ModeEnhancement
BrandROHM Semiconductor
Fall Time5.7 ns, 8.5 ns
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeMOSFET
Unit Weight0.002748 oz
USHTS8541290095
Product CategoryMOSFET
DescriptionMOSFET 30V Nch+Pch Power MOSFET
Part # AliasesQH8MA2
Pd - Power Dissipation1.5 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time8 ns, 16.8 ns