RF6E045AJTCR

厂牌：ROHM

包装：REEL 3000

类目：元器件 > 分立器件 > MOSFET

编号：B000049535816

描述：MOSFET N-CH 30V 4.5A TUMT-6; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0169ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:1W; Transistor Case Style:TUMT; No. of Pins:6Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

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商品参数

参数项参数值

Forward Transconductance - Min6 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage500 mV

TechnologySi

Id - Continuous Drain Current4.5 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 12 V, + 12 V

Typical Turn-On Delay Time15 ns

Rds On - Drain-Source Resistance16.9 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time40 ns

MXHTS85412999

KRHTS8541299000

CNHTS8541290000

Qg - Gate Charge8.1 nC

Package / CaseSOT-363-6

Mounting StyleSMD/SMT

JPHTS8541290100

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

CAHTS8541290000

Channel ModeEnhancement

Fall Time10 ns

TARIC8541290000

PackagingMouseReel

PackagingReel

PackagingCut Tape

BrandROHM Semiconductor

RoHS Details

ImageROHM Semiconductor RF6E045AJTCR

Unit Weight0.000265 oz

Product CategoryMOSFET

SubcategoryMOSFETs

Factory Pack Quantity3000

ManufacturerROHM Semiconductor

Product TypeMOSFET

Pd - Power Dissipation1 W

Part # AliasesRF6E045AJ

USHTS8541290095

DescriptionMOSFET Nch 30V 4.5A Si MOSFET

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Rise Time15 ns