R6030ENZ4C13

厂牌：ROHM

包装：TUBE 600

类目：元器件 > 分立器件 > MOSFET

编号：B000049535829

描述：MOSFET N-CH 600V 30A 150DEG C 305W; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.115ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:305W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

下载数据手册

商品参数

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2 V

TechnologySi

Id - Continuous Drain Current30 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time40 ns

Rds On - Drain-Source Resistance130 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time190 ns

Qg - Gate Charge85 nC

Package / CaseTO-247-3

Mounting StyleThrough Hole

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

Channel ModeEnhancement

PackagingTube

TARIC8541290000

BrandROHM Semiconductor

RoHS Details

ImageROHM Semiconductor R6030ENZ4C13

Product CategoryMOSFET

Factory Pack Quantity30

SubcategoryMOSFETs

ManufacturerROHM Semiconductor

Product TypeMOSFET

Pd - Power Dissipation305 W

USHTS8541290095

DescriptionMOSFET 600V N-CH 30A POWER MOSFET

Vds - Drain-Source Breakdown Voltage600 V

Number of Channels1 Channel

Rise Time55 ns