RQ6E050ATTCR

厂牌：ROHM

包装：REEL 3000

类目：元器件 > 分立器件 > MOSFET

编号：B000049535884

描述：MOSFET P-CH -30V -5A TSMT-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:1.25W; Transistor Case Style:TSMT; No. of Pins:6Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018)

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商品参数

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Id - Continuous Drain Current5 A

Transistor PolarityP-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time9.6 ns

Rds On - Drain-Source Resistance38 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time55 ns

MXHTS85412999

KRHTS8541299000

Mounting StyleSMD/SMT

Qg - Gate Charge20.8 nC

JPHTS8541290100

CAHTS8541290000

Package / CaseSOT-457-6

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

CNHTS8541290000

PackagingCut Tape

PackagingReel

TARIC8541290000

RoHS Details

ImageROHM Semiconductor RQ6E050ATTCR

Channel ModeEnhancement

SubcategoryMOSFETs

Fall Time22 ns

BrandROHM Semiconductor

Factory Pack Quantity3000

Unit Weight0.196723 oz

Product CategoryMOSFET

Product TypeMOSFET

ManufacturerROHM Semiconductor

DescriptionMOSFET Pch -30V -5A Power MOSFET

USHTS8541290095

Pd - Power Dissipation1.25 W

Part # AliasesRQ6E050AT

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Rise Time16 ns