商品参数
参数项参数值
参数项参数值
PackagingCut Tape (CT)
Package / CaseTO-261-3
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1A (Tc)
Rds On (Max) @ Id, Vgs3.25Ohm @ 1A, 15V
FET Feature-
Power Dissipation (Max)6.6W (Tc)
Vgs(th) (Max) @ Id7V @ 100µA
Supplier Device PackageSOT-223-3
Grade-
Drive Voltage (Max Rds On, Min Rds On)15V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds130 pF @ 100 V
Qualification-
Moisture Sensitivity Level1 (Unlimited)
