参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current51 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time65 ns
Rds On - Drain-Source Resistance48 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time170 ns
MXHTS85412999
Qg - Gate Charge120 nC
KRHTS8541299000
Package / CaseTO-263-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time210 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.068654 oz
SeriesRCJ510N25
ImageROHM Semiconductor RCJ510N25TL
BrandROHM Semiconductor
Pd - Power Dissipation1.56 W
Factory Pack Quantity1000
Product TypeMOSFET
Part # AliasesRCJ510N25
ManufacturerROHM Semiconductor
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET Low Power MCU; LCD 4x44, 16Kbyte ROM, TQFP120
Vds - Drain-Source Breakdown Voltage250 V
USHTS8541290095
Number of Channels1 Channel
Rise Time300 ns
Moisture Sensitivity Level1 (Unlimited)