参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current3.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time15 ns
Rds On - Drain-Source Resistance65 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time45 ns
Mounting StyleSMD/SMT
Package / CaseSOT-457-6
Qg - Gate Charge9.2 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
ImageROHM Semiconductor RQ6E035SPTR
PackagingReel
PackagingCut Tape
Channel ModeEnhancement
SubcategoryMOSFETs
BrandROHM Semiconductor
Fall Time25 ns
ManufacturerROHM Semiconductor
Product CategoryMOSFET
Factory Pack Quantity3000
USHTS8541290095
Product TypeMOSFET
DescriptionMOSFET -30V P-CHANNEL-3.5
Part # AliasesRQ6E035SP
Pd - Power Dissipation1.25 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time35 ns