参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current15 A
ImageROHM Semiconductor SH8KA7GZETB
DescriptionMOSFET 30V N-CHANNEL DUAL
Vgs - Gate-Source Voltage- 20 V, + 20 V
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time16 ns
Rds On - Drain-Source Resistance9.3 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time125 ns
PackagingReel
PackagingCut Tape
Package / CaseSOP-8
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
Factory Pack Quantity2500
Mounting StyleSMD/SMT
Product TypeMOSFET
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
RoHS Details
TARIC8541290000
Qg - Gate Charge81 nC
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time58 ns
Unit Weight0.021025 oz
Part # AliasesSH8KA7
Pd - Power Dissipation4.6 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time20 ns