参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT140 MHz, 180 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.15 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current150 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO- 6 V, 7 V
Collector-Emitter Saturation Voltage- 0.5 V, 0.4 V
MXHTS85412999
Width1.25 mm
DC Collector/Base Gain hfe Min120
Height0.9 mm
Length2 mm
KRHTS8541299000
CNHTS8541290000
Package / CaseSOT-353-5
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageROHM Semiconductor UMY1NTR
SeriesUMY1N
Factory Pack Quantity3000
BrandROHM Semiconductor
Unit Weight0.000212 oz
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT NPN/PNP 50V 150MA
Pd - Power Dissipation150 mW
Part # AliasesUMY1N
USHTS8541290095