参数项参数值
参数项参数值
Forward Transconductance - Min1.2 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 3 V
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time8 ns
Rds On - Drain-Source Resistance190 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time35 ns
CNHTS8541290000
Qg - Gate Charge4.5 nC
Package / CaseSC-96-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time10 ns
TARIC8541290000
PackagingMouseReel
PackagingCut Tape
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RSR020P05HZGTL
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1 W
USHTS8541290095
DescriptionMOSFET -45V P-CHANNEL -2A
Vds - Drain-Source Breakdown Voltage45 V
Number of Channels1 Channel
Rise Time10 ns