参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current31 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance11.4 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time85 ns
Qg - Gate Charge42 nC
Package / CaseHSMT-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time50 ns
TARIC8541290000
PackagingCut Tape
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RQ3E100ATTB
Product CategoryMOSFET
Unit Weight0.004348 oz
ManufacturerROHM Semiconductor
SubcategoryMOSFETs
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation17 W
USHTS8541290095
DescriptionMOSFET -30V P-CHANNEL -31A
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time14 ns
Moisture Sensitivity Level1 (Unlimited)