参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Id - Continuous Drain Current1.6 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time8 ns
Width1.7 mm
Rds On - Drain-Source Resistance190 mOhms
Transistor Type1 N-Channel MOSFET
Typical Turn-Off Delay Time16 ns
Height0.85 mm
Length2 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge2.3 nC
JPHTS8541290100
CAHTS8541290000
Package / CaseSOT-323-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageROHM Semiconductor RTF016N05TL
Channel ModeEnhancement
SeriesRTF016N05
SubcategoryMOSFETs
Fall Time10 ns
BrandROHM Semiconductor
Factory Pack Quantity3000
Unit Weight0.001687 oz
Product CategoryMOSFET
Product TypeMOSFET
ManufacturerROHM Semiconductor
DescriptionMOSFET 2.5V Drive Nch MOSFET
USHTS8541290095
Pd - Power Dissipation0.8 W
Part # AliasesRTF016N05
Vds - Drain-Source Breakdown Voltage45 V
Number of Channels1 Channel
Rise Time14 ns
Moisture Sensitivity Level1 (Unlimited)