参数项参数值
参数项参数值
Peak DC Collector Current100 mA
Continuous Collector Current50 mA
ConfigurationDual Common Emitter
Transistor PolarityNPN
Width1.7 mm
DC Collector/Base Gain hfe Min30
Length2 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseUMT-5
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
ImageROHM Semiconductor UMG9NTR
SubcategoryTransistors
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
SeriesUMG9N
Product TypeBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Unit Weight0.001798 oz
USHTS8541290095
Product CategoryBipolar Transistors - Pre-Biased
DescriptionBipolar Transistors - Pre-Biased DUAL NPN 50V 50MA SOT-353
Part # AliasesUMG9N
Pd - Power Dissipation150 mW
Typical Resistor Ratio1
Typical Input Resistor10 kOhms
Moisture Sensitivity Level1 (Unlimited)