参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current1 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time9 ns
Rds On - Drain-Source Resistance280 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time25 ns
Width1.6 mm
MXHTS85412999
Height0.85 mm
Length2.9 mm
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge2.1 nC
Package / CaseSOT-353-5
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time10 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
SeriesUS5U30
BrandROHM Semiconductor
ImageROHM Semiconductor US5U30TR
Unit Weight0.000212 oz
SubcategoryMOSFETs
Product CategoryMOSFET
Factory Pack Quantity3000
Product TypeMOSFET
ManufacturerROHM Semiconductor
Pd - Power Dissipation1 W
Part # AliasesUS5U30
DescriptionMOSFET P-CH 20V 1A
USHTS8541290095
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time8 ns