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商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Id - Continuous Drain Current6.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time11 ns
Rds On - Drain-Source Resistance18.1 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time52 ns
Qg - Gate Charge12.2 nC
Package / CaseSOT-346-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time19 ns
TARIC8541290000
PackagingReel
PackagingCut Tape
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RQ5E065AJTCL
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation1 W
Part # AliasesRQ5E065AJ
USHTS8541210095
DescriptionMOSFET 30V N-CHANNEL 6.5A
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time17 ns