参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current250 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time3.5 ns
Rds On - Drain-Source Resistance1.7 Ohms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time18 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge-
CNHTS8541290000
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time28 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
SeriesUM6K31N
BrandROHM Semiconductor
ImageROHM Semiconductor UM6K31NTN
Unit Weight0.000265 oz
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation150 mW
DescriptionMOSFET Trans MOSFET N-CH 60V 0.25A
USHTS8541290095
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels2 Channel
Rise Time5 ns