参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage300 mV
TechnologySi
Id - Continuous Drain Current200 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time5 ns
Rds On - Drain-Source Resistance800 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15 ns
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge-
Package / CaseSOT-323-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
ImageROHM Semiconductor RU1C002UNTCL
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time10 ns
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
SeriesRU1C002UN
Factory Pack Quantity3000
Product CategoryMOSFET
USHTS8541290095
Product TypeMOSFET
DescriptionMOSFET Trans MOSFET N-CH 20V 0.2A
Pd - Power Dissipation150 mW
Part # AliasesRU1C002UN
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time10 ns