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商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Id - Continuous Drain Current4 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance48 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time37 ns
Qg - Gate Charge5.9 nC
Mounting StyleSMD/SMT
Package / CaseSOT-346-3
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
Minimum Operating Temperature- 55 C
Factory Pack Quantity3000
BrandROHM Semiconductor
Product TypeMOSFET
Channel ModeEnhancement
DescriptionMOSFET 30V N-CHANNEL 4A
ManufacturerROHM Semiconductor
TARIC8541290000
ImageROHM Semiconductor RQ5E040TNTL
Product CategoryMOSFET
Fall Time19 ns
RoHS Details
SubcategoryMOSFETs
Part # AliasesRQ5E040TN
Pd - Power Dissipation1 W
USHTS8541210095
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time18 ns