参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current4.5 A
Transistor PolarityN-Channel, P-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5 ns, 7.2 ns
Rds On - Drain-Source Resistance80 mOhms, 82 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time10 ns, 28 ns
Qg - Gate Charge3 nC, 6.7 nC
Package / CaseSOP-8
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
BrandROHM Semiconductor
Factory Pack Quantity2500
ManufacturerROHM Semiconductor
TARIC8541290000
Product CategoryMOSFET
Channel ModeEnhancement
Product TypeMOSFET
Fall Time3.5 ns, 8.5 ns
RoHS Details
DescriptionMOSFET 30V N&P-CHANNEL
ImageROHM Semiconductor SH8MA2GZETB
SubcategoryMOSFETs
USHTS8541290095
Part # AliasesSH8MA2
Pd - Power Dissipation2.7 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time7.5 ns, 8 ns