参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current3.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5.5 ns
Width1.8 mm
Height0.95 mm
Transistor Type1 N-Channel
Typical Turn-Off Delay Time10 ns
MXHTS85412999
Length3 mm
KRHTS8541299000
Qg - Gate Charge6 nC
JPHTS8541290100
CAHTS8541290000
Package / CaseSOT-346-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ProductMOSFET
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
ImageROHM Semiconductor RQ5E035BNTCL
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time3.5 ns
BrandROHM Semiconductor
Factory Pack Quantity3000
Unit Weight0.000423 oz
Product TypeMOSFET
Product CategoryMOSFET
DescriptionMOSFET Nch 30V 3.5A Power MOSET
ManufacturerROHM Semiconductor
USHTS8541290095
Pd - Power Dissipation1 W
Part # AliasesRQ5E035BN
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time7.5 ns
TypePower MOSFET