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商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current3 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time7 ns
Rds On - Drain-Source Resistance75 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time50 ns
Qg - Gate Charge5.2 nC
Package / CaseSOT-346-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time35 ns
TARIC8541290000
PackagingReel
PackagingCut Tape
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RQ5E030RPTL
Product CategoryMOSFET
Unit Weight0.014154 oz
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1 W
Part # AliasesRQ5E030RP
USHTS8541210095
DescriptionMOSFET -30V P-CHANNEL -3A
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time18 ns