参数项参数值
参数项参数值
Forward Transconductance - Min1.6 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current1.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time5 ns
Rds On - Drain-Source Resistance130 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time20 ns
Width1.7 mm
MXHTS85412999
Length2 mm
KRHTS8541299000
Qg - Gate Charge1.8 nC
CNHTS8541210000
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Fall Time3 ns
TARIC8541290000
RoHS Details
SeriesUS6K4
BrandROHM Semiconductor
ImageROHM Semiconductor US6K4TR
Unit Weight0.000265 oz
Product TypeMOSFET
Factory Pack Quantity3000
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Pd - Power Dissipation1 W
Part # AliasesUS6K4
DescriptionMOSFET Med Pwr, Sw MOSFET N Chan, 20V, 1.5A
USHTS8541290095
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time5 ns