RQ6C050UNTR

厂牌：ROHM

包装：REEL 3000

类目：元器件 > 分立器件 > MOSFET

编号：B000049537703

描述：MOSFET N-CH 20V 5A 150DEG C 1.25W; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:1.25W; Transistor Case Style:SOT-457T; No. of Pins:6Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

下载数据手册

商品参数

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage300 mV

TechnologySi

Id - Continuous Drain Current5 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 10 V, + 10 V

Typical Turn-On Delay Time15 ns

Rds On - Drain-Source Resistance22 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time70 ns

MXHTS85412999

Qg - Gate Charge12 nC

KRHTS8541299000

Package / CaseSOT-457-6

Mounting StyleSMD/SMT

JPHTS8541290100

Maximum Operating Temperature+ 150 C

CAHTS8541290000

Minimum Operating Temperature- 55 C

Channel ModeEnhancement

CNHTS8541290000

Fall Time100 ns

PackagingCut Tape

PackagingMouseReel

PackagingReel

TARIC8541290000

RoHS Details

ImageROHM Semiconductor RQ6C050UNTR

BrandROHM Semiconductor

Pd - Power Dissipation1.25 W

Factory Pack Quantity3000

Product TypeMOSFET

Part # AliasesRQ6C050UN

ManufacturerROHM Semiconductor

Product CategoryMOSFET

SubcategoryMOSFETs

DescriptionMOSFET 1.5V Drive Nch MOSFET

Vds - Drain-Source Breakdown Voltage20 V

USHTS8541290095

Number of Channels1 Channel

Rise Time25 ns