参数项参数值
参数项参数值
Forward Transconductance - Min2 s
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 2.5 V
TechnologySi
Id - Continuous Drain Current3.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time15 ns
Rds On - Drain-Source Resistance65 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time45 ns
Qg - Gate Charge9.2 nC
Package / CaseSC-95-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time25 ns
TARIC8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RSQ035P03HZGTR
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation1.25 W
USHTS8541290095
DescriptionMOSFET -30V P-CHANNEL -3.5A
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time35 ns