参数项参数值
参数项参数值
DC Current Gain hFE Max600
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
ConfigurationDual
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Width1.25 mm
Height0.9 mm
DC Collector/Base Gain hfe Min100
Length2 mm
Mounting StyleSMD/SMT
Package / CaseUMT-6
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryTransistors
BrandROHM Semiconductor
SeriesUMH4N
Product TypeBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Unit Weight0.001235 oz
Product CategoryBipolar Transistors - Pre-Biased
DescriptionBipolar Transistors - Pre-Biased DUAL NPN 50V 100MA SOT-363
Part # AliasesUMH4N
Pd - Power Dissipation150 mW
Typical Input Resistor10 kOhms