参数项参数值
参数项参数值
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
ConfigurationDual
Transistor PolarityNPN
Width1.25 mm
Height0.9 mm
DC Collector/Base Gain hfe Min68
JPHTS8541290100
CAHTS8541290000
MXHTS85412999
Length2 mm
KRHTS8541299000
ImageROHM Semiconductor UMH2NTN
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryTransistors
Mounting StyleSMD/SMT
Product CategoryBipolar Transistors - Pre-Biased
Package / CaseUMT-6
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
RoHS Details
TARIC8541290000
Product TypeBJTs - Bipolar Transistors - Pre-Biased
BrandROHM Semiconductor
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Unit Weight0.001235 oz
SeriesUMH2N
USHTS8541290095
DescriptionBipolar Transistors - Pre-Biased DUAL NPN 50V 30MA
Pd - Power Dissipation150 mW
Part # AliasesUMH2N
Typical Resistor Ratio1
Typical Input Resistor47 kOhms