参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current6 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance26.4 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time70 ns
Qg - Gate Charge25.9 nC
Package / CaseSOT-457-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time30 ns
TARIC8541290000
PackagingCut Tape
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RQ6E060ATTCR
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1.25 W
Part # AliasesRQ6E060AT
USHTS8541290095
DescriptionMOSFET -30V P-CHANNEL -6A
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time15 ns