参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityN-Channel, P-Channel
Id - Continuous Drain Current9 A, 8.5 A
Minimum Operating Temperature- 55 C
Vgs - Gate-Source Voltage- 20 V, + 20 V
DescriptionMOSFET 30V N&P-CHANNEL
Rds On - Drain-Source Resistance21 mOhms, 29.6 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time33 ns, 55 ns
Package / CaseSOP-8
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
Mounting StyleSMD/SMT
Factory Pack Quantity2500
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Product TypeMOSFET
RoHS Details
TARIC8541290000
Qg - Gate Charge15.5 nC, 19.6 nC
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.004356 oz
Fall Time7 ns, 22 ns
CNHTS8541290000
Pd - Power Dissipation3 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time19 ns, 16 ns