参数项参数值
参数项参数值
Forward Transconductance - Min3.5 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current4.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance38 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time41 ns
Mounting StyleSMD/SMT
Package / CaseSC-95-6
Qg - Gate Charge6.8 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
ImageROHM Semiconductor RSQ045N03HZGTR
PackagingCut Tape
PackagingMouseReel
PackagingReel
Channel ModeEnhancement
SubcategoryMOSFETs
BrandROHM Semiconductor
Fall Time14 ns
ManufacturerROHM Semiconductor
Product CategoryMOSFET
Factory Pack Quantity3000
USHTS8541290095
Product TypeMOSFET
DescriptionMOSFET 30V N-CHANNEL 4.5A
Pd - Power Dissipation1.25 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time19 ns
Moisture Sensitivity Level1 (Unlimited)