参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 0.7 V
TechnologySi
Id - Continuous Drain Current2.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
QualificationAEC-Q101
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance100 MOhms
Typical Turn-Off Delay Time40 ns
Qg - Gate Charge6.4 nC
Package / CaseSOT-457T-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Fall Time17 ns
PackagingReel
PackagingCut Tape
TARIC8541290000
RoHS Details
BrandROHM Semiconductor
ImageROHM Semiconductor RTQ025P02HZGTR
SubcategoryMOSFETs
Product CategoryMOSFET
Factory Pack Quantity3000
Product TypeMOSFET
ManufacturerROHM Semiconductor
Pd - Power Dissipation1.25 W
DescriptionMOSFET -20V P-CHANNEL -2.5A
USHTS8541290095
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time20 ns