参数项参数值
参数项参数值
DC Current Gain hFE Max80
Peak DC Collector Current100 mA
Continuous Collector Current- 100 mA
ConfigurationDual
Transistor PolarityPNP
Width1.25 mm
Height0.9 mm
DC Collector/Base Gain hfe Min80
Length2 mm
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
RoHS Details
ImageROHM Semiconductor UMB10NTN
SubcategoryTransistors
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
SeriesUMB10N
Product TypeBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Unit Weight0.000265 oz
Product CategoryBipolar Transistors - Pre-Biased
DescriptionBipolar Transistors - Pre-Biased DUAL PNP 50V 100MA SOT-363
Part # AliasesUMB10N
Pd - Power Dissipation300 mW
Typical Resistor Ratio0.048
Typical Input Resistor2.2 kOhms