参数项参数值
参数项参数值
DC Current Gain hFE Max560
Collector- Base Voltage VCBO- 60 V, 60 V
Maximum DC Collector Current- 150 mA, 150 mA
Collector- Emitter Voltage VCEO Max- 50 V, 50 V
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO- 6 V, 7 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 500 mV, 400 mV
DC Collector/Base Gain hfe Min120
Package / CaseSOT-563-6
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageROHM Semiconductor UMZ1NFHATR
TARIC8541210000
RoHS Details
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
BrandROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT TRANSISTOR HIGH RELIABILITY
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation150 mW
SubcategoryTransistors
Part # AliasesUMZ1NFHA
USHTS8541210075