参数项参数值
参数项参数值
DC Current Gain hFE Max600
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
ConfigurationDual
Transistor PolarityNPN
MXHTS85412999
Width1.25 mm
DC Collector/Base Gain hfe Min100
Height0.9 mm
Length2 mm
KRHTS8541299000
CNHTS8541290000
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor UMH8NTR
TARIC8541290000
RoHS Details
Factory Pack Quantity3000
SeriesUMH8N
ManufacturerROHM Semiconductor
BrandROHM Semiconductor
Product TypeBJTs - Bipolar Transistors - Pre-Biased
Product CategoryBipolar Transistors - Pre-Biased
SubcategoryTransistors
Part # AliasesUMH8N
USHTS8541290095
Typical Input Resistor10 kOhms