参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6 ns, 6 ns
Transistor Type2 N-Channel
Typical Turn-Off Delay Time26 ns, 26 ns
Qg - Gate Charge4 nC, 4 nC
Package / CaseSOP-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time5 ns, 5 ns
PackagingReel
ImageROHM Semiconductor SH8K12TB1
BrandROHM Semiconductor
Pd - Power Dissipation2 W
ManufacturerROHM Semiconductor
Factory Pack Quantity2500
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET TRNSISTR 4V DRIVE NCH+NCH MOSFET
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time27 ns, 27 ns