参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current4.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5 ns
Rds On - Drain-Source Resistance80 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time10 ns
Qg - Gate Charge3 nC
Package / CaseSOP-8
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Product CategoryMOSFET
Factory Pack Quantity2500
TARIC8541290000
Product TypeMOSFET
RoHS Details
Channel ModeEnhancement
Fall Time3.5 ns
ImageROHM Semiconductor SH8KA1GZETB
DescriptionMOSFET 30V N-CHANNEL DUAL
SubcategoryMOSFETs
USHTS8541290095
Pd - Power Dissipation2.7 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time7.5 ns