参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityN-Channel, P-Channel
Id - Continuous Drain Current4.5 A
ImageROHM Semiconductor SH8M31GZETB
Minimum Operating Temperature- 55 C
Vgs - Gate-Source Voltage- 20 V, + 20 V
DescriptionMOSFET 60V N&P-CHANNEL
Typical Turn-On Delay Time12 ns, 17 ns
Rds On - Drain-Source Resistance65 mOhms, 70 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time40 ns, 100 ns
PackagingReel
PackagingCut Tape
Package / CaseSOP-8
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
Factory Pack Quantity2500
Mounting StyleSMD/SMT
Product TypeMOSFET
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
TARIC8541290000
Qg - Gate Charge7 nC, 40 nC
RoHS Details
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time13 ns, 40 ns
CNHTS8541290000
Pd - Power Dissipation2 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels2 Channel
Rise Time18 ns