参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT140 MHz, 180 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.15 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current150 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO- 6 V, 7 V
MXHTS85412999
Width1.25 mm
DC Collector/Base Gain hfe Min120
Height0.9 mm
Length2 mm
KRHTS8541299000
CNHTS8541210000
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
ImageROHM Semiconductor UMZ1NTR
RoHS Details
SeriesUMZ1NT
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Unit Weight0.000265 oz
BrandROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT NPN/PNP 50V 150MA SOT-363
SubcategoryTransistors
Pd - Power Dissipation150 mW
Part # AliasesUMZ1N
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)