参数项参数值
参数项参数值
DC Current Gain hFE Max600
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
ConfigurationDual Common Emitter
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Width1.7 mm
DC Collector/Base Gain hfe Min100
Length2 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseUMT-5
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541290000
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor UMG4NTR
SubcategoryTransistors
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors - Pre-Biased
SeriesUMG4N
Unit Weight0.000282 oz
USHTS8541290095
Product CategoryBipolar Transistors - Pre-Biased
DescriptionBipolar Transistors - Pre-Biased DUAL NPN 50V 100MA SOT-353
Part # AliasesUMG4N
Pd - Power Dissipation150 mW
Typical Input Resistor10 kOhms