参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Id - Continuous Drain Current5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time9 ns
Rds On - Drain-Source Resistance76 mOhms
Transistor Type2 P-Channel
Typical Turn-Off Delay Time50 ns
Mounting StyleSMD/SMT
Qg - Gate Charge6.5 nC
Package / CaseHUML2020L-8
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
TARIC8541290000
RoHS Details
ImageROHM Semiconductor UT6JA3TCR
PackagingCut Tape
PackagingReel
SubcategoryMOSFETs
Channel ModeEnhancement
BrandROHM Semiconductor
Fall Time30 ns
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product CategoryMOSFET
USHTS8541290095
Product TypeMOSFET
DescriptionMOSFET -20V P-CHANNEL
Part # AliasesUT6JA3
Pd - Power Dissipation2 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time36 ns