参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityN-Channel, P-Channel
Id - Continuous Drain Current7 A, 6 A
ImageROHM Semiconductor SH8MA3TB1
Minimum Operating Temperature- 55 C
Vgs - Gate-Source Voltage- 20 V, + 20 V
DescriptionMOSFET 30V N&P-CHANNEL
Typical Turn-On Delay Time7.2 ns, 8 ns
Rds On - Drain-Source Resistance28 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time12 ns, 40 ns
PackagingCut Tape
PackagingReel
Package / CaseSOP-8
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
Factory Pack Quantity2500
Mounting StyleSMD/SMT
Product TypeMOSFET
BrandROHM Semiconductor
RoHS Details
ManufacturerROHM Semiconductor
TARIC8541290000
Qg - Gate Charge7.2 nC, 10 nC
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time5.7 ns, 20 ns
Unit Weight0.082453 oz
CNHTS8541290000
Pd - Power Dissipation2.8 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time8 ns, 12 ns
Moisture Sensitivity Level1 (Unlimited)