参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current700 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6 ns
Rds On - Drain-Source Resistance800 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time17 ns
Width1.7 mm
MXHTS85412999
Length2 mm
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge1.7 nC
ProductMOSFET Small Signal
Package / CaseSOT-353-5
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time5 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
SeriesUS5U35
BrandROHM Semiconductor
Unit Weight0.000212 oz
SubcategoryMOSFETs
Factory Pack Quantity3000
Product CategoryMOSFET
Product TypeMOSFET
ManufacturerROHM Semiconductor
Pd - Power Dissipation700 mW
Part # AliasesUS5U35
DescriptionMOSFET P Chan-45V+/-0.7A 4V Drive
USHTS8541290095
Vds - Drain-Source Breakdown Voltage25 V
Number of Channels1 Channel
Rise Time5 ns