参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage300 mV
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time9 ns
Rds On - Drain-Source Resistance105 mOhms
Transistor Type2 P-Channel
Typical Turn-Off Delay Time80 ns
Qg - Gate Charge7.6 nC
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
Fall Time25 ns
TARIC8541290000
ImageROHM Semiconductor US6J12TCR
RoHS Details
Factory Pack Quantity3000
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Product TypeMOSFET
Product CategoryMOSFET
DescriptionMOSFET -12V P-CHANNEL
SubcategoryMOSFETs
Pd - Power Dissipation1 W
Part # AliasesUS6J12
USHTS8541210095
Vds - Drain-Source Breakdown Voltage12 V
Number of Channels2 Channel
Rise Time4 ns