参数项参数值
参数项参数值
Peak DC Collector Current100 mA
Continuous Collector Current50 mA
ConfigurationDual
Transistor PolarityNPN, PNP
Width1.25 mm
Height0.9 mm
DC Collector/Base Gain hfe Min30
JPHTS8541290100
CAHTS8541290000
MXHTS85412999
Length2 mm
KRHTS8541299000
ImageROHM Semiconductor UMD3NTR
PackagingCut Tape
PackagingMouseReel
PackagingReel
Mounting StyleSMD/SMT
Product CategoryBipolar Transistors - Pre-Biased
Package / CaseSOT-363-6
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
RoHS Details
SubcategoryTransistors
TARIC8541290000
Product TypeBJTs - Bipolar Transistors - Pre-Biased
BrandROHM Semiconductor
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Unit Weight0.000265 oz
SeriesUMD3N
USHTS8541290095
DescriptionBipolar Transistors - Pre-Biased NPN/PNP 50V 50MA
Pd - Power Dissipation150 mW
Part # AliasesUMD3N
Typical Resistor Ratio1
Typical Input Resistor10 kOhms
Number of Channels2 Channel
Moisture Sensitivity Level1 (Unlimited)