参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current1.5 A
Transistor PolarityN-Channel, SBD
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time7 ns
Rds On - Drain-Source Resistance240 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15 ns
Width1.6 mm
MXHTS85412999
Height0.85 mm
Length2.9 mm
KRHTS8541299000
CNHTS8541290000
ProductMOSFET Small Signal
Package / CaseSOT-353-5
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time9 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
SeriesUS5U1
BrandROHM Semiconductor
ImageROHM Semiconductor US5U1TR
Unit Weight0.000212 oz
SubcategoryMOSFETs
Product CategoryMOSFET
Factory Pack Quantity3000
Product TypeMOSFET
ManufacturerROHM Semiconductor
Pd - Power Dissipation1 W
Part # AliasesUS5U1
DescriptionMOSFET N-CH 30V 1.5A
USHTS8541290095
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time9 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)