参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
CNHTS8541290000
Typical Turn-On Delay Time4.4 ns
Height1 mm
MXHTS85423901
Length6 mm
Rds On - Drain-Source Resistance4.6 mOhms
Transistor Type1 N-Channel Power MOSFET
Typical Turn-Off Delay Time20 ns
Package / CaseVSONP-8
KRHTS8541299000
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Qg - Gate Charge36 nC
TARIC8542399000
ManufacturerTexas Instruments
RoHS Details
BrandTexas Instruments
ImageTexas Instruments CSD18531Q5A
Factory Pack Quantity2500
SubcategoryMOSFETs
SeriesCSD18531Q5A
Development KitDRV8711EVM
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 60V N-Channel NexFET Power MOSFET
Channel ModeEnhancement
USHTS8541290095
Unit Weight0.003097 oz
TradenameNexFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time7.8 ns