参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.5 V
TechnologySi
Id - Continuous Drain Current34 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
PackagingReel
PackagingCut Tape
Typical Turn-On Delay Time17 ns
Factory Pack Quantity3000
ManufacturerToshiba
Rds On - Drain-Source Resistance28 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
BrandToshiba
Package / CaseTSON-8
TARIC8541290000
Maximum Operating Temperature+ 175 C
Mounting StyleSMD/SMT
RoHS Details
ImageToshiba TPN19008QM,LQ
Qg - Gate Charge16 nC
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET PD=57W F=1MHZ
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.000705 oz
Fall Time5 ns
CNHTS8541290000
Part # AliasesTPN19008QM,LQ(S
Pd - Power Dissipation57 W
Vds - Drain-Source Breakdown Voltage80 V
Number of Channels1 Channel
Rise Time7.7 ns