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商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min-
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current1.1 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage-
Typical Turn-On Delay Time-
Rds On - Drain-Source Resistance520 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time-
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge-
Mounting StyleSMD/SMT
Minimum Operating Temperature- 40 C
Package / CaseSOT-223-3
Maximum Operating Temperature+ 125 C
CNHTS8541290000
ImageDiodes Incorporated ZXMS6001N3TA
TARIC8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
RoHS Details
Channel ModeEnhancement
Fall Time26 ns
SeriesZXMS600
SubcategoryMOSFETs
Factory Pack Quantity1000
Product CategoryMOSFET
BrandDiodes Incorporated
Unit Weight0.009171 oz
Product TypeMOSFET
DescriptionMOSFET 60V LO INPT CURR SELF PROT LO SD SWCH
ManufacturerDiodes Incorporated
USHTS8541290095
Pd - Power Dissipation1.5 W
TradenameIntelliFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time27 ns